| PART |
Description |
Maker |
| BLL1214-35 BLL1214-35_1 |
L-band radar LDMOS transistor
L-band radar LDMOS driver transistor
From old datasheet system
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BLL6H1214LS-250 |
LDMOS L-band Radar Power Transistor
|
NXP
|
| BLS6G2933S-130 |
LDMOS S-band radar power transistor
|
NXP Semiconductors
|
| BLS6G2933P-200 |
LDMOS S-Band radar pallet amplifier
|
Philips Semiconductors
|
| BLS7G2729L-350P BLS7G2729LS-350P |
LDMOS S-Band radar power transistor BLS7G2729LS-350P<SOT539B (SOT539B)|<<http://www.nxp.com/packages/SOT539B.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| MHPA18010 |
MHPA18010 1805-1880 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier
CDMA BAND RF LINEAR LDMOS AMPLIFIER
|
MOTOROLA[Motorola, Inc]
|
| XAM1214-130 AM1214-130 |
RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS
RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| NE5531079A-A NE5531079A-T1-A NE5531079A-T1A |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET LEAD FREE, 79A, 4 PIN
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
|
Duracell
Renesas Electronics Corporation
|
| AM83135-050 4914 |
Hook-Up Wire; Conductor Size AWG:18; No. Strands x Strand Size:16 x 30; Jacket Color:Orange; Approval Bodies:UL, CSA; Approval Categories:UL AWM Styles 1007, 1565; CSA Types TR-64, TRSR-64; JQA-F; Passes VW-1 Flame Test RoHS Compliant: Yes
From old datasheet system
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| AM1214-175 2705 |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
From old datasheet system
RF & Microwave Transistors L-Band Radar Applications(用于L波段雷达脉冲驱动的RF和微波晶体管)
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
